Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing
نویسندگان
چکیده
منابع مشابه
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced ...
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ژورنال
عنوان ژورنال: e-Journal of Surface Science and Nanotechnology
سال: 2009
ISSN: 1348-0391
DOI: 10.1380/ejssnt.2009.301